The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2022

Filed:

Jan. 13, 2020
Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Ajey Poovannummoottil Jacob, Watervliet, NY (US);

Yusheng Bian, Ballston, NY (US);

Steven Shank, Jericho, VT (US);

Assignee:

GLOBALFOUNDRIES U.S. INC., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/103 (2006.01); G02B 6/13 (2006.01); H01L 31/0392 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
H01L 31/103 (2013.01); G02B 6/12004 (2013.01); G02B 6/131 (2013.01); H01L 31/03921 (2013.01); G02B 2006/12061 (2013.01);
Abstract

One illustrative photodetector disclosed herein includes an N-doped waveguide structure defined in a semiconductor material, the N-doped waveguide structure comprising a plurality of first fins, and a detector structure positioned on the N-doped waveguide structure, wherein a portion of the detector structure is positioned laterally between the plurality of first fins. In this example, the photodetector also includes at least one N-doped contact region positioned in the semiconductor material and a P-doped contact region positioned in the detector structure.


Find Patent Forward Citations

Loading…