The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2022
Filed:
May. 10, 2020
Tower Semiconductor Ltd., Migdal Haemek, IL;
Ramot AT Tel Aviv University Ltd., Tel Aviv, IL;
Zohar Shaked, Ramat Yishai, IL;
Yakov Roizin, Afula, IL;
Menachem Vofsy, Kiriat Tivon, IL;
Alexey Heiman, Ramat Yishai, IL;
Yossi Rosenwaks, Hod Hasharon, IL;
Klimentiy Shimanovich, Ramat Gan, IL;
Yhonatan Vaknin, Yoqneam Illit, IL;
TOWER SEMICONDUCTOR LTD., Migdal Haemek, IL;
RAMOT AT TEL AVIV UNIVERSITY LTD., Tel Aviv, IL;
Abstract
For example, an Electrostatically Formed Nanowire (EFN) may include a source region; at least one drain region; a wire region configured to drive a current between the source and drain regions via a conductive channel; a first lateral-gate area extending along a first surface of the wire region between the source and drain regions; a second lateral-gate area extending along a second surface of the wire region between the source and drain regions; and a sensing area in opening in a backside of a silicon substrate under the wire region and the first and second lateral-gate areas, the sensing area configured to, in reaction to a predefined substance, cause a change in a conductivity of the conductive channel.