The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2022

Filed:

Jul. 31, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

SeungSik Kim, Hwaseong-si, KR;

Sungchul Kim, Hwaseong-si, KR;

Haeyong Park, Yongin-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/232 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1463 (2013.01); H01L 27/1461 (2013.01); H01L 27/14603 (2013.01); H01L 27/14614 (2013.01); H01L 27/14641 (2013.01); H01L 27/14643 (2013.01); H01L 27/14654 (2013.01); H01L 27/14689 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H04N 5/232122 (2018.08);
Abstract

An image sensor including a substrate having a first, a first device isolation region adjacent to the first surface and defining a unit pixel, a transfer gate on the first surface at an edge of the unit pixel, a photoelectric conversion part in the substrate and adjacent to a first side surface of the transfer gate, and a floating diffusion region in the substrate and adjacent to a second side surface of the transfer gate. The second side surface faces the first side surface. The first device isolation region is spaced apart from the second side surface. The substrate and the first device isolation region are doped with impurities having a first conductivity. A first impurity concentration of the first device isolation region is greater than a second impurity concentration of the substrate.


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