The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2022

Filed:

Jan. 13, 2020
Applicant:

Tcl China Star Optoelectronics Technology Co., Ltd., Shenzhen, CN;

Inventor:

Fen Long, Shenzhen, CN;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1222 (2013.01); H01L 27/127 (2013.01); H01L 27/1288 (2013.01);
Abstract

The present disclosure provides a TFT array substrate and a manufacturing method thereof. For the manufacturing method, a source electrode and a drain electrode are formed at first, and then edges of the source electrode and the drain electrode are used as masks to pattern a semiconductor layer to form an amorphous silicon island, which makes edges of the amorphous silicon island flush with the edges of the source electrode and the drain electrode, and completely removes the exposed semiconductor layer outside a metal layer, thereby decreasing photoelectric sensitivity of a TFT device, decreasing a size of the TFT device, and being beneficial for saving layouts and simplifying processes.


Find Patent Forward Citations

Loading…