The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2022
Filed:
Jan. 16, 2019
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Satoshi Okuda, Tokyo, JP;
Tatsuro Watahiki, Tokyo, JP;
Hisashi Saito, Tokyo, JP;
Hiroki Muraoka, Tokyo, JP;
Assignee:
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 29/4236 (2013.01); H01L 29/42364 (2013.01); H01L 29/4925 (2013.01); H01L 29/7397 (2013.01);
Abstract
Reliability of a gate resistor element during high-temperature operation is enhanced. A semiconductor device includes a drift layer, a base layer, an emitter layer, a gate insulation film, a gate electrode, a gate pad electrode, a first resistance layer, and a first nitride layer. A resistor of the first resistance layer has a negative temperature coefficient. The first resistance layer is made of hydrogen-doped amorphous silicon. The first nitride layer is made of a silicon nitride layer or an aluminum nitride layer.