The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2022
Filed:
Apr. 28, 2017
Fuji Electric Co., Ltd., Kawasaki, JP;
Masaharu Yamaji, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
An HVIC is a gate driver IC that drives a three-phase inverter and includes high-potential-side regions for three phases on a single semiconductor substrate. The high-potential-side region includes an n-type region and has a potential that is fixed at a power source voltage potential through a VB contact region in the n-type region. The high-potential-side region has a high-side driving circuit that drives an upper arm element of the inverter. An interphase region between adjacent high-potential-side regions has no GND contact region and no GND contact electrode arranged therein, and has only a p-type region at a ground potential constituting a low-potential-side region. The high-potential-side region of one phase has a p-type opening between the high-side driving circuit of thereof and the high-side driving circuit or the GND contact region of an adjacent high-potential-side region that is of another phase and sandwiches the interphase region therebetween.