The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2022

Filed:

May. 08, 2017
Applicant:

Sony Corporation, Tokyo, JP;

Inventor:

Tadamasa Shioyama, Kumamoto, JP;

Assignee:

SONY CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); H01L 23/522 (2006.01); H01L 21/3205 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); H01L 21/3205 (2013.01); H01L 21/768 (2013.01); H01L 21/76801 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/522 (2013.01); H01L 2223/54426 (2013.01);
Abstract

Provided is a semiconductor device that includes a semiconductor substrate, an interconnection layer that is formed on a first face of the semiconductor substrate, at least one of a structural element that is formed to the interconnection layer, or a structural element that is formed in the semiconductor substrate from the first face side of the semiconductor substrate, a semiconductor-through-electrode that is positioned and formed, from a second face side of the semiconductor substrate opposite to the first face, so as to have a predetermined positional relationship with respect to the structural element, and a metallic-diffusion-preventing insulating layer that is formed from the first face side of the semiconductor substrate in a position, and with a shape, surrounding the semiconductor-through-electrode in the semiconductor substrate.


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