The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2022

Filed:

Oct. 12, 2020
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Yoshimasa Uchinuma, Tokyo, JP;

Yusuke Ojima, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 23/48 (2006.01); H01L 21/00 (2006.01); H05K 7/18 (2006.01); H01L 23/31 (2006.01); H01L 27/088 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49568 (2013.01); H01L 23/3114 (2013.01); H01L 23/4952 (2013.01); H01L 23/49513 (2013.01); H01L 23/49524 (2013.01); H01L 23/49562 (2013.01); H01L 24/37 (2013.01); H01L 27/088 (2013.01); H01L 24/06 (2013.01); H01L 24/29 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A semiconductor device includes a semiconductor chip, first and second source terminals and a Kelvin terminal, wherein the semiconductor chip includes a first source electrode coupled to the first source terminal through a first connecting portion, a second source electrode coupled to the second source terminal through a second connecting portion, a Kelvin pad coupled to the Kelvin terminal and formed independently of the first source electrode, a power MOSFET that has a source coupled to the first source electrode, a sense MOSFET that has a source coupled to the second source electrode, a source pad formed on a portion of the first source electrode and coupled to the first connecting portion, a plurality of source potential extraction ports formed around a connection point between the first connecting portion and the source pad and a plurality of wires coupled between the source potential extraction ports and the Kelvin pad.


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