The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2022
Filed:
Aug. 08, 2019
Applicant:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Inventor:
Hironori Itoh, Osaka, JP;
Assignee:
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/14 (2006.01); C30B 29/36 (2006.01); H01L 21/02 (2006.01); H01L 21/205 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2053 (2013.01); H01L 21/02378 (2013.01); H01L 29/1608 (2013.01); H01L 29/66053 (2013.01);
Abstract
In a step of calculating formation conditions for the second silicon carbide layer, a formation time of the second silicon carbide layer is calculated as a value obtained by multiplying a value obtained by dividing the second thickness by the first thickness, by the first formation time, and a flow rate of a second ammonia gas in a step of forming the second silicon carbide layer by epitaxial growth is calculated as a value obtained by multiplying a value obtained by dividing the second concentration by the first concentration, by the first flow rate.