The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2022
Filed:
Aug. 27, 2020
Applicant:
Kioxia Corporation, Tokyo, JP;
Inventors:
Takehiro Kondoh, Yokkaichi Mie, JP;
Junichi Hashimoto, Yokkaichi Mie, JP;
Soichi Yamazaki, Yokkaichi Mie, JP;
Yuya Matsubara, Yokkaichi Mie, JP;
Assignee:
KIOXIA CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/033 (2006.01); H01L 21/308 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0334 (2013.01); H01L 21/0223 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/3083 (2013.01); H01L 21/3086 (2013.01); H01L 21/3088 (2013.01);
Abstract
A method for manufacturing a semiconductor device includes: forming a first film on a substrate; forming a second film containing at least carbon on the first film; forming a hole in the second film; and forming a recess, which communicates with the hole, in the first film by etching using the second film as a mask. In this method, the second film includes a first layer formed on the first film, and a second layer formed on the first layer. The first layer having a higher oxygen concentration than the second layer.