The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2022
Filed:
Jan. 11, 2018
Applicant:
Soitec, Bernin, FR;
Inventors:
Patrick Reynaud, Murianette, FR;
Marcel Broekaart, Theys, FR;
Frederic Allibert, Albany, NY (US);
Christelle Veytizou, Bernin, FR;
Luciana Capello, Grenoble, FR;
Isabelle Bertrand, Bernin, FR;
Assignee:
Soitec, Bernin, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02002 (2013.01); H01L 21/76254 (2013.01);
Abstract
A support for a semiconductor structure includes a base substrate, a first silicon dioxide insulating layer positioned on the base substrate and having a thickness greater than 20 nm, and a charge trapping layer having a resistivity higher than 1000 ohm·cm and a thickness greater than 5 microns positioned on the first insulating layer.