The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2022
Filed:
Feb. 24, 2021
Applicant:
Kioxia Corporation, Tokyo, JP;
Inventors:
Sumiko Domae, Yokohama Kanagawa, JP;
Daisaburo Takashima, Yokohama Kanagawa, JP;
Assignee:
KIOXIA CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0004 (2013.01); G11C 13/003 (2013.01); G11C 13/0069 (2013.01); H01L 27/2436 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); G11C 2013/0078 (2013.01); G11C 2213/79 (2013.01);
Abstract
During a writing operation to change a resistance of a part of a variable resistance material film facing a first word line, the semiconductor storage device applies a first voltage to the first word line, applies a second voltage to a second word line, and applies a third voltage to a third word line. The first, second, and third word lines are stacked above a substrate. The second word line is adjacent to the first word line in the stacking direction. The third word line is not adjacent to the first word line in the stacking direction.