The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2022

Filed:

Jun. 02, 2020
Applicant:

Emc Ip Holding Company Llc, Hopkinton, MA (US);

Inventors:

Zheng He, Shanghai, CN;

Zhipeng Zhang, Shanghai, CN;

Zhe Yang, Chengdu, CN;

Yao Chen, Chengdu, CN;

Binbin Deng, Shanghai, CN;

Assignee:

EMC IP Holding Company LLC, Hopkinton, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 16/27 (2019.01); G06F 16/28 (2019.01); G06F 16/16 (2019.01); G06F 11/30 (2006.01); G06F 16/182 (2019.01);
U.S. Cl.
CPC ...
G06F 16/27 (2019.01); G06F 11/3034 (2013.01); G06F 16/168 (2019.01); G06F 16/1827 (2019.01); G06F 16/284 (2019.01);
Abstract

Techniques, which provide visual representations, involve displaying, in a first display area, a plurality of first visual representations indicating a plurality of storage nodes in a storage system, the plurality of storage nodes in the storage system having data replication relations, and the data replication relations including: replication of first data at a first storage node to one or more second storage nodes, and/or replication of second data at one or more second storage nodes to the first storage node. The techniques further involve displaying, in the first display area, a plurality of second visual representations indicating a plurality of data replication relations between the plurality of storage nodes. Accordingly, respective storage nodes in the storage system in a topology view can be visualized, and data replication relations between the respective storage nodes can be clearly described.


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