The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2022
Filed:
Jan. 31, 2020
Massachusetts Institute of Technology, Cambridge, MA (US);
Brian F. Aull, Cambridge, MA (US);
Joseph S. Ciampi, Westford, MA (US);
Renee D. Lambert, Framingham, MA (US);
Christopher Leitz, Watertown, MA (US);
Karl Alexander McIntosh, Groton, MA (US);
Steven Rabe, W. Roxbury, MA (US);
Kevin Ryu, Arlington, MA (US);
Daniel R. Schuette, Arlington, MA (US);
David Volfson, Sharon, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
A chip-to-chip integration process for rapid prototyping of silicon avalanche photodiode (APD) arrays has been developed. This process has several advantages over wafer-level 3D integration, including: (1) reduced cost per development cycle since a dedicated full-wafer read-out integrated circuit (ROIC) fabrication is not needed, (2) compatibility with ROICs made in previous fabrication runs, and (3) accelerated schedule. The process provides several advantages over previous processes for chip-to-chip integration, including: (1) shorter processing time as the chips can be diced, bump-bonded, and then thinned at the chip-level faster than in a wafer-level back-illumination process, and (2) the CMOS substrate provides mechanical support for the APD device, allowing integration of fast microlenses directly on the APD back surface. This approach yields APDs with low dark count rates (DCRs) and higher radiation tolerance for harsh environments and can be extended to large arrays of APDs.