The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2022

Filed:

Feb. 01, 2018
Applicant:

Sun Yat-sen University, Guangzhou, CN;

Inventors:

Yi Zhang, Guangzhou, CN;

Chao Qian, Guangzhou, CN;

Jiarui Xu, Guangzhou, CN;

Runxin Bei, Guangzhou, CN;

Siwei Liu, Guangzhou, CN;

Zhenguo Chi, Guangzhou, CN;

Assignee:

SUN YAT-SEN UNIVERSITY, Guangzhou, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C08G 73/10 (2006.01); C08L 79/08 (2006.01);
U.S. Cl.
CPC ...
C08G 73/1067 (2013.01); C08L 79/08 (2013.01); C08L 2203/12 (2013.01); C08L 2203/16 (2013.01); C08L 2203/20 (2013.01);
Abstract

The invention discloses a polymer with a low dielectric constant and a molecular structure design method capable of reducing the dielectric constant of the polymer. A straight-chain rigid group is introduced into a meta-position of a side group benzene ring or diphenyl chain segment structure by using the designability of a molecular chain side group of a polymer; and a free volume hole with a larger size is formed in the material through loose rotation of the side group benzene ring to inhibit molecular chain deposition, thereby reducing the dielectric constant of the polymer material. The design method is simple, is suitable for a common high-performance polymer material, can be applied to preparation of a low-dielectric polymer material, is suitable for the field of new and high technology industries such as electronics, microelectronics, information and aerospace and is especially suitable for the field of super-large-scale integrated circuits.


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