The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2022
Filed:
Jan. 14, 2019
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Tatsuya E. Sato, San Jose, CA (US);
Li-Qun Xia, Cupertino, CA (US);
Sean M. Seutter, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C01F 17/218 (2020.01); H01L 21/02 (2006.01); C23C 16/40 (2006.01); C09D 1/00 (2006.01);
U.S. Cl.
CPC ...
C01F 17/218 (2020.01); C09D 1/00 (2013.01); C23C 16/405 (2013.01); C23C 16/45531 (2013.01); C23C 16/45553 (2013.01); H01L 21/0228 (2013.01); H01L 21/02192 (2013.01); C01P 2002/54 (2013.01);
Abstract
Amorphous silicon doped yttrium oxide films and methods of making same are described. Deposition of the amorphous silicon doped yttrium oxide film by thermal chemical vapor deposition or atomic layer deposition process are described.