The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2022
Filed:
Feb. 28, 2019
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Takahiko Shindo, Musashino, JP;
Naoki Fujiwara, Musashino, JP;
Kimikazu Sano, Musashino, JP;
Hiroyuki Ishii, Musashino, JP;
Hideaki Matsuzaki, Musashino, JP;
Takashi Yamada, Musashino, JP;
Kengo Horikoshi, Musashino, JP;
NIPPON TELEGRAPH AND TELEPHONE CORPORATION, Tokyo, JP;
Abstract
A method for manufacturing a monolithically integrated semiconductor optical integrated element comprising a DFB laser, an EA modulator, and a SOA disposed in a light emitting direction, comprising the step of forming a semiconductor wafer on which the elements are two-dimensionally arrayed and aligned the optical axes; cleaving the semiconductor wafer along a plane orthogonal to the light emitting direction to form a semiconductor bar including a plurality of the elements arranged one-dimensionally along a direction orthogonal to the light emitting direction such that the elements adjacent to each other share an identical cleavage end face as a light emission surface; inspecting the semiconductor bar by driving the SOA and the DFB laser through a connection wiring part together; and separating out the semiconductor bar after the inspection to cut the connection wiring part connecting the electrode of the SOA and the DFB laser to isolate from each other.