The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2022

Filed:

Nov. 22, 2019
Applicant:

Rogers Corporation, Chandler, AZ (US);

Inventors:

Kristi Pance, Auburndale, MA (US);

Karl E. Sprentall, Scottsdale, AZ (US);

Shawn P. Williams, Andover, MA (US);

Robert C. Daigle, Amston, CT (US);

Assignee:

ROGERS CORPORATION, Rogers, CT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01Q 9/04 (2006.01); H01Q 5/364 (2015.01); H01Q 21/30 (2006.01); H01Q 1/38 (2006.01); B29C 64/147 (2017.01); B29C 64/153 (2017.01); B29C 64/112 (2017.01); B29C 64/118 (2017.01); B29C 64/10 (2017.01); H01Q 5/50 (2015.01); H01Q 1/36 (2006.01); H01Q 1/42 (2006.01); H01Q 1/48 (2006.01); H01Q 21/06 (2006.01); H01Q 1/52 (2006.01); B33Y 10/00 (2015.01);
U.S. Cl.
CPC ...
H01Q 9/0485 (2013.01); B29C 64/10 (2017.08); B29C 64/112 (2017.08); B29C 64/118 (2017.08); B29C 64/147 (2017.08); B29C 64/153 (2017.08); H01Q 1/36 (2013.01); H01Q 1/38 (2013.01); H01Q 1/422 (2013.01); H01Q 1/48 (2013.01); H01Q 5/364 (2015.01); H01Q 5/50 (2015.01); H01Q 9/0457 (2013.01); H01Q 21/30 (2013.01); B33Y 10/00 (2014.12); H01Q 1/523 (2013.01); H01Q 9/0492 (2013.01); H01Q 21/061 (2013.01);
Abstract

A method for the manufacture of a DRA, or an array of the DRA's, each DRA including: a substrate; and, a plurality of volumes of dielectric materials disposed on the substrate comprising N volumes, N being an integer equal to or greater than 3, disposed to form successive and sequential layered volumes V(i), i being an integer from 1 to N, wherein volume V(1) forms an innermost volume, wherein a successive volume V(i+1) forms a layered volume disposed over and at least partially embedding volume V(i), wherein volume V(N) at least partially embeds all volumes V(1) to V(N−1), the method including: forming on the substrate a first volume of the plurality of volumes of dielectric materials from a first dielectric material having a first dielectric constant; and, forming over the first volume a second volume of the plurality of volumes of dielectric materials with a second dielectric material having a second dielectric constant.


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