The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2022

Filed:

Sep. 07, 2015
Applicant:

Cynora Gmbh, Bruchsal, DE;

Inventors:

Thomas Baumann, Karlsruhe, DE;

Mathias Mydlak, Karlsruhe, DE;

Harald Flugge, Karlsruhe, DE;

Charlotte Flechon, Bruchsal, DE;

Georgios Liaptsis, Mannheim, DE;

Assignee:

CYNORA GMBH, Bruchsal, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/54 (2006.01); H01L 51/50 (2006.01); H01L 51/00 (2006.01); H01L 51/52 (2006.01); H01L 51/56 (2006.01);
U.S. Cl.
CPC ...
H01L 51/5028 (2013.01); H01L 51/009 (2013.01); H01L 51/0091 (2013.01); H01L 51/5004 (2013.01); H01L 51/5016 (2013.01); H01L 51/5056 (2013.01); H01L 51/5072 (2013.01); H01L 51/5096 (2013.01); H01L 51/5206 (2013.01); H01L 51/5221 (2013.01); H01L 51/56 (2013.01); H01L 51/504 (2013.01); H01L 51/5036 (2013.01); H01L 51/5044 (2013.01); H01L 2251/301 (2013.01); H01L 2251/303 (2013.01); H01L 2251/306 (2013.01); H01L 2251/308 (2013.01); H01L 2251/5376 (2013.01); H01L 2251/5384 (2013.01); H01L 2251/55 (2013.01); H01L 2251/552 (2013.01); Y02E 10/549 (2013.01);
Abstract

The present invention relates to a light-emitting layer B comprising a first emitter compound (a) having a non-exited state S0(a), a first excited singlet state S1(a) and a first excited triplet state T1(a); a second emitter compound (b) having a non-exited state S0(b), a first excited singlet state S1(b) and a first excited triplet state T1(b), wherein the energy level of S1(a) is higher than that of S1(b), the energy level of S1(b) is higher than that of T1(b) and wherein the rate of reverse intersystem crossing from T1(a) to S1(a) is higher than the rate of excitation energy transfer from S1(a) to S1(b) and/or the rate of excitation energy transfer from T1(a) to T1(b), and/or wherein the energy level of T1(b) is higher than that of T1(a). Further, the present invention also refers to an opto-electronic device comprising such light-emitting layer B and use thereof.


Find Patent Forward Citations

Loading…