The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2022

Filed:

Nov. 01, 2019
Applicants:

Chengdu Boe Optoelectronics Technology Co., Ltd., Sichuan, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Ying Liu, Beijing, CN;

Yuhang Peng, Beijing, CN;

Congcong Du, Beijing, CN;

Lei Fan, Beijing, CN;

Chunfang Fan, Beijing, CN;

Qi Wu, Beijing, CN;

Xiaozhong Xue, Beijing, CN;

Haoran Qin, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/50 (2006.01);
U.S. Cl.
CPC ...
H01L 51/5012 (2013.01);
Abstract

The present disclosure discloses a film layer analysis method for an electroluminescent device. The electroluminescent device includes an anode layer, an electroluminescent material layer, and a silver-bearing cathode layer that are sequentially laminated. The film layer analysis method includes stripping the silver-bearing cathode layer from the electroluminescent device by using a first ion sputtering source to obtain an analysis sample with the electroluminescent material layer exposed, and analyzing the exposed electroluminescent material layer by using a second ion sputtering source; wherein sputtering energy of the first ion sputtering source is greater than sputtering energy of the second ion sputtering source.


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