The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2022
Filed:
Jul. 24, 2018
Applicant:
Imec Vzw, Leuven, BE;
Inventors:
Chang Chen, Heverlee, BE;
Koen Martens, Aalter, BE;
Pol Van Dorpe, Spalbeek, BE;
Simone Severi, Leuven, BE;
Assignee:
IMEC VZW, Leuven, BE;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/786 (2006.01); G01N 27/414 (2006.01); H01L 21/308 (2006.01); H01L 29/10 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); G01N 27/4146 (2013.01); H01L 21/308 (2013.01); H01L 29/1041 (2013.01); H01L 29/511 (2013.01);
Abstract
In a first aspect, the present invention relates to a nanopore field-effect transistor sensor (), comprising: i) a source region () and a drain region (), defining a source-drain axis; ii) a channel region () between the source region () and the drain region (); iii) a nanopore (), defined as an opening in the channel region () which completely crosses through the channel region (), oriented at an angle to the source-drain axis, having a first orifice () and a second orifice (), and being adapted for creating a non-linear potential profile between the first () and second () orifice.