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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11367792 B1

PDFFull Text
Date of Patent:
Jun. 21, 2022

Filed:

Nov. 01, 2019

Thin film transistor, fabricating method thereof, and display apparatus

Applicants:

Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Wei Song, Beijing, CN;

Liangchen Yan, Beijing, CN;

Ce Zhao, Beijing, CN;

Heekyu Kim, Beijing, CN;

Yuankui Ding, Beijing, CN;

Leilei Cheng, Beijing, CN;

Yingbin Hu, Beijing, CN;

Wei Li, Beijing, CN;

Guangyao Li, Beijing, CN;

Qinghe Wang, Beijing, CN;

Assignees:

HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD, Anhui, CN;

BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;

Attorney:

WHDA, LLP

Primary Examiner:

Nikolay K Yushin

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/00 (2006.01); H01L 29/00 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/24 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78633 (2013.01); H01L 21/02592 (2013.01); H01L 21/02631 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 27/1288 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 27/3262 (2013.01); H01L 27/3272 (2013.01);
Abstract

The present disclosure is related to a thin film transistor. The thin film transistor may include an active layer; a gate insulating layer on the active layer; and a gate and a plurality of metal films on the gate insulating layer. The plurality of metal films may be spaced apart from the gate, and insulated from the gate and the active layer.

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