The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2022
Filed:
Mar. 01, 2018
Applicant:
G-ray Switzerland SA, Hauterive, CH;
Inventor:
Hans Von Känel, Wallisellen, CH;
Assignee:
Other;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); G01N 23/046 (2018.01); H01L 31/107 (2006.01); H04N 5/378 (2011.01); H01L 23/544 (2006.01); H01L 31/028 (2006.01); H01L 31/0296 (2006.01); H01L 31/0304 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14649 (2013.01); G01N 23/046 (2013.01); H01L 23/544 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/1465 (2013.01); H01L 27/1469 (2013.01); H01L 27/14636 (2013.01); H01L 27/14658 (2013.01); H01L 27/14659 (2013.01); H01L 27/14676 (2013.01); H01L 27/14689 (2013.01); H01L 27/14694 (2013.01); H01L 27/14696 (2013.01); H01L 31/028 (2013.01); H01L 31/02966 (2013.01); H01L 31/03046 (2013.01); H01L 31/107 (2013.01); H01L 31/1804 (2013.01); H01L 31/1812 (2013.01); H01L 31/1832 (2013.01); H01L 31/1844 (2013.01); H01L 31/1892 (2013.01); H04N 5/378 (2013.01); H01L 27/14634 (2013.01); H01L 27/14638 (2013.01); H01L 27/14661 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54493 (2013.01);
Abstract
Monolithic pixel detectors, systems and methods for the detection and imaging of electromagnetic radiation with high spectral and spatial resolution comprise a Si wafer with a CMOS processed pixel readout bonded to an absorber wafer in wafer bonds comprising conducting bonds between doped, highly conducting charge collectors in the readout and highly conducting regions in the absorber wafer and poorly conducting bonds between regions of high resistivity.