The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2022

Filed:

Dec. 11, 2018
Applicant:

Hitachi Astemo, Ltd., Hitachinaka, JP;

Inventors:

Nobutake Tsuyuno, Tokyo, JP;

Hiroshi Houzouji, Hitachinaka, JP;

Assignee:

HITACHI ASTEMO, LTD., Ibaraki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/473 (2006.01); H01L 23/42 (2006.01);
U.S. Cl.
CPC ...
H01L 23/473 (2013.01); H01L 23/42 (2013.01);
Abstract

An object of the invention is to improve the reliability of a power semiconductor device. The power semiconductor device according to the invention includes a semiconductor element, a first terminal and a second terminal that transmit current to the semiconductor element, a first base and a second base that are disposed to face each other while interposing a part of the first terminal, a part of the second terminal, and the semiconductor element between the first base and the second base, and a sealing material that is provided in a space between the first base and the second base. The second terminal includes an intermediate portion formed in such a way that a distance from the first terminal increases along a direction away from the semiconductor element. The intermediate portion is provided between the first base and the second base and in the sealing material.


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