The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2022

Filed:

Nov. 05, 2018
Applicant:

Hitachi Astemo, Ltd., Hitachinaka, JP;

Inventor:

Nobutake Tsuyuno, Tokyo, JP;

Assignee:

HITACHI ASTEMO, LTD., Ibaraki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/433 (2006.01); H01L 21/56 (2006.01); H01L 23/367 (2006.01); H01L 23/495 (2006.01); H01L 23/00 (2006.01); H01L 25/07 (2006.01); H02M 7/537 (2006.01);
U.S. Cl.
CPC ...
H01L 23/4334 (2013.01); H01L 21/565 (2013.01); H01L 23/367 (2013.01); H01L 23/49562 (2013.01); H01L 24/73 (2013.01); H01L 25/072 (2013.01); H02M 7/537 (2013.01);
Abstract

An object is to improve the productivity of a power semiconductor device. A power semiconductor device according to the invention includes a circuit portion having a conductor for transmitting a current and a power semiconductor element, a first base portion and a second base portion facing each other with the circuit portion interposed therebetween, and a transfer mold member which is in contact with the conductor and the power semiconductor element and is filled in a space between the first base portion and the second base portion. The first base portion includes a first flat portion that is connected to a peripheral edge of the first base portion, and a first bent portion that connects the first flat portion and another portion of the first base portion and is plastically deformed. The transfer mold member is integrally configured in contact with the first flat portion.


Find Patent Forward Citations

Loading…