IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11367661 B1

PDFFull Text
Date of Patent:
Jun. 21, 2022

Filed:

Nov. 13, 2020

Semiconductor device having deep trench structure and method of manufacturing thereof

Applicant:

Key Foundry Co., Ltd., Cheongju-si, KR;

Inventors:

Yang Beom Kang, Cheongju-si, KR;

Kang Sup Shin, Cheongju-si, KR;

Assignee:

KEY FOUNDRY CO., LTD., Cheongju-si, KR;

Attorney:

NSIP Law

Primary Examiner:

Fazli Erdem

Int. Cl.
CPC ...
H01L 21/82 (2006.01); H01L 27/08 (2006.01); H01L 29/10 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/285 (2006.01); H01L 21/265 (2006.01); H01L 21/3105 (2006.01); H01L 21/02 (2006.01); H01L 21/764 (2006.01); H01L 21/762 (2006.01); H01L 21/8236 (2006.01); H01L 29/66 (2006.01); H01L 29/45 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823481 (2013.01); H01L 21/02129 (2013.01); H01L 21/26513 (2013.01); H01L 21/28518 (2013.01); H01L 21/31055 (2013.01); H01L 21/764 (2013.01); H01L 21/76237 (2013.01); H01L 21/8236 (2013.01); H01L 21/823493 (2013.01); H01L 27/0883 (2013.01); H01L 29/0638 (2013.01); H01L 29/0649 (2013.01); H01L 29/1083 (2013.01); H01L 29/1095 (2013.01); H01L 29/45 (2013.01); H01L 29/66681 (2013.01); H01L 29/7816 (2013.01);
Abstract

A semiconductor device includes etch stop films formed on the first gate electrode, the first source region, the first drain region, and the shallow trench isolation regions, respectively. First interlayer insulating films are formed on the etch stop film, respectively. Deep trenches are formed in the substrate between adjacent ones of the first interlayer insulating films to overlap the shallow trench isolation regions. Sidewall insulating films are formed in the deep trenches, respectively. A gap-fill insulating film is formed on the sidewall insulating film. A second interlayer insulating film is formed on the gap-fill insulating film. A top surface of the second interlayer insulating film is substantially planar and a bottom surface of the second interlayer insulating film is undulating.

Find Patent Forward Citations

Loading…