The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2022

Filed:

Sep. 16, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Mitsunari Horiuchi, Yokkaichi Mie, JP;

Toshiyuki Sasaki, Yokkaichi Mie, JE;

Tomo Hasegawa, Yokkaichi Mie, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/3065 (2013.01); H01L 21/32137 (2013.01); H01L 21/31138 (2013.01);
Abstract

A manufacturing method of a semiconductor device includes etching a film using etching gas that has a first or second molecule which has a CFgroup and in which the number of carbon atoms is four or five. Further, the first molecule has an R1 group that bonds to a carbon atom in the CFgroup through a double bond, and the R1 group contains carbon and also chlorine, bromine, iodine, or oxygen. Further, the second molecule has an R2 group that bonds to a carbon atom in the CFgroup through a single bond and an R3 group that bonds to the carbon atom in the CFgroup through a single bond, the R2 group or the R3 group or both containing carbon, and both the R2 group and the R3 group containing hydrogen, fluorine, chlorine, bromine, iodine, or oxygen.


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