The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2022

Filed:

Jul. 08, 2020
Applicant:

Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;

Inventor:

Zih-Song Wang, Nantou County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0338 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01);
Abstract

A semiconductor patterning process includes the following steps. A substrate is provided, wherein the substrate has a first region, a second region, and a third region, and the second region is located between the first region and the third region. A plurality of initial mask patterns are formed on the substrate. A first mask material layer is conformally formed on the substrate. A first mask pattern is formed above at least two adjacent initial mask patterns in the second region and on the first mask material layer in between, and a second mask pattern is formed on the first mask material layer on sidewalls of remaining initial mask patterns. A portion of the first mask material layer is removed using the first mask pattern and the second mask pattern as a mask to form a final mask pattern on the substrate.


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