The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2022
Filed:
Nov. 25, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/16 (2006.01); G11C 16/24 (2006.01); G11C 16/34 (2006.01); G11C 16/12 (2006.01);
U.S. Cl.
CPC ...
G11C 16/16 (2013.01); G11C 16/12 (2013.01); G11C 16/24 (2013.01); G11C 16/3445 (2013.01);
Abstract
A non-volatile memory device includes a memory cell array including a plurality of cell strings, each of the plurality of cell strings includes a gate-induced drain leakage (GIDL) transistor and a memory cell group, and a control logic to apply a voltage to each of the plurality of cell strings. The control logic performs a first erase operation of erasing the memory cell groups of each of the plurality of cell strings, a first verification operation of detecting erase results of the memory cell groups of each of the plurality of cell strings, and a program operation of programming the GIDL transistors of some of the plurality of cell strings.