Method, apparatus and electronic device for hessian-free photolithography mask optimization

Abstract

The present invention relates generally to the technical field of integrated circuit mask design, and more particularly to a method, an apparatus and an electronic device for Hessian-Free photolithography mask optimization. The method includes steps: S, inputting a design layout of a mask to be optimized; S, positioning error monitoring points on the design layout of the mask to be optimized; S, obtaining an optimization variable x of the mask to be optimized; S, forming an objective function cost on the optimization variable x; and S, optimizing the objective junction cost by a Hessian-Free-based conjugate gradient method, to obtain an optimization result of the mask to be optimized. Optimizing the objective function cost based on a Hessian-Free conjugate gradient method to obtain an optimization result of the mask to be optimized, which can greatly reduce the computation resources in the optimization process, make the optimization process simpler, feasible, and improve the optimization efficiency. Meanwhile, there is no need to use the quasi-Newton method to obtain the approximate replacement matrix of the H matrix, which can improve the accuracy of the optimization result.