The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2022

Filed:

Nov. 04, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Yesin Ryu, Seoul, KR;

Namsung Kim, Yongin-si, KR;

Sanguhn Cha, Suwon-si, KR;

Jaeyoun Youn, Seoul, KR;

Kijun Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 11/10 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1044 (2013.01); G06F 11/1016 (2013.01); G06F 11/1068 (2013.01); H01L 25/0657 (2013.01); H01L 2225/06541 (2013.01);
Abstract

A semiconductor memory device including: a buffer die; memory dies stacked on the buffer die; and TSVs, at least one of the memory dies includes: a memory cell array; an error correction code (ECC) engine; an error information register; and a control logic circuit configured to control the ECC engine to perform a read-modify-write operation, wherein the control logic circuit is configured to: record, in the error information register, a first address associated with a first codeword based on the an generation signal and a first syndrome obtained by an ECC decoding; and determine an error attribute of the first codeword based on a change of the first syndrome, recorded in the error information register, based on a plurality of read-modify-write operations.


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