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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11366386 B1

PDFFull Text
Date of Patent:
Jun. 21, 2022

Filed:

May. 17, 2019

Patterning process

Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Tsukasa Watanabe, Joetsu, JP;

Tsutomu Ogihara, Joetsu, JP;

Assignee:

SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Kathleen Duda

Int. Cl.
CPC ...
G03F 7/00 (2006.01); G03F 7/20 (2006.01); G03F 7/004 (2006.01); G03F 7/32 (2006.01); C07C 307/00 (2006.01); C07C 309/10 (2006.01); G03F 7/075 (2006.01); G03F 7/09 (2006.01); G03F 7/038 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0035 (2013.01); C07C 307/00 (2013.01); C07C 309/10 (2013.01); G03F 7/0042 (2013.01); G03F 7/0382 (2013.01); G03F 7/0757 (2013.01); G03F 7/094 (2013.01); G03F 7/2004 (2013.01); G03F 7/2022 (2013.01); G03F 7/325 (2013.01);
Abstract

A patterning process, including: forming the first resist film from first resist material containing an acid generator and thermosetting compound having a hydroxy group and/or carboxy group protected by an acid-labile group; forming the second resist film on first resist film from a second resist material containing a metal compound (A) and a sensitizer; irradiating the first and second resist film with a high energy beam or an electron beam to perform pattern exposure to deprotect the hydroxy group and/or carboxy group in a pattern exposed portion of first resist film and to form a crosslinked portion of the component (A) with the deprotected hydroxy and/or carboxy group on the pattern exposed portion; and developing the second resist film with a developer to give a metal film pattern composed of the crosslinked portion. This provides a method for forming a thin film resist pattern with higher resolution and higher sensitivity.

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