The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2022

Filed:

Feb. 18, 2021
Applicant:

Antaios, Meylan, FR;

Inventors:

Marc Drouard, Valence, FR;

Jérémie Vigier, Le Sappey en Chartreuse, FR;

Jérémy Brun-Picard, Sion, CH;

Assignee:

ANTAIOS, Meylan, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/04 (2006.01); H01L 43/06 (2006.01); H01L 27/22 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 43/04 (2013.01); H01L 27/222 (2013.01); H01L 43/06 (2013.01); H01L 43/10 (2013.01);
Abstract

A memory device may comprise a substrate defining a main plane; a plurality of memory cells each comprising a SOT current layer disposed in the main plane of the substrate and a magnetic tunnel junction residing on the SOT current layer; and a bit line and a source line to flow a write current in a write path including the SOT current layer of a selected memory cell. The source line comprises a conductive magnetic material providing a magnetic bias field extending to the magnetic tunnel junction of the selected memory cell for assisting the switching of the cell state when the write current is flowing.


Find Patent Forward Citations

Drouard, Marc. (2022). Magneto resistive memory device (U.S. Patent No. 11362266). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11362266

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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