The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2022

Filed:

Dec. 19, 2019
Applicant:

Glo Ab, Lund, SE;

Inventors:

Fariba Danesh, Los Altos Hills, CA (US);

Tsun Lau, Sunnyvale, CA (US);

Assignee:

NANOSYS, INC., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/40 (2010.01); H01L 33/46 (2010.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/405 (2013.01); H01L 33/0025 (2013.01); H01L 33/32 (2013.01); H01L 33/46 (2013.01); H01L 33/62 (2013.01);
Abstract

A light emitting diode includes a first conductivity type semiconductor material region, an active region located over the first conductivity type semiconductor material region, a second conductivity type semiconductor material layer located over the active region, a first layer containing at least one of nickel or gold located over the second conductivity type semiconductor material layer, a reflective top contact electrode located over the first layer, a dielectric material layer located over the top contact electrode and containing an opening, and a reflector located over the dielectric material layer and contacting the top contact electrode through the opening in the dielectric material layer.


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