The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2022

Filed:

Jun. 02, 2020
Applicant:

Facebook Technologies, Llc, Menlo Park, CA (US);

Inventors:

Berthold Hahn, Cork, IE;

Thomas Lauermann, Cork, IE;

Markus Broell, Cork, IE;

Assignee:

FACEBOOK TECHNOLOGIES, LLC, Menlo Park, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 23/00 (2006.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/02 (2010.01); H01L 33/06 (2010.01); H01L 33/24 (2010.01); H01L 33/30 (2010.01); H01L 33/46 (2010.01); H01L 33/58 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/382 (2013.01); H01L 24/80 (2013.01); H01L 27/156 (2013.01); H01L 33/0016 (2013.01); H01L 33/0033 (2013.01); H01L 33/025 (2013.01); H01L 33/06 (2013.01); H01L 33/24 (2013.01); H01L 33/30 (2013.01); H01L 33/46 (2013.01); H01L 33/58 (2013.01); H01L 33/62 (2013.01); H01L 2224/80013 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A micro-light emitting diode (micro-LED) includes a current aperture to confine the current in a localized region such that the carrier recombination mostly occurs in the localized region to emit photons, thereby reducing the surface recombination and improving the quantum efficiency. The current confinement and localization are achieved using a localized breakthrough of a barrier layer by a localized contact, lightly p-doped active layers to suppress lateral transport of the carriers to the surface region, selective ion implantation, etching, or oxidation of a semiconductor layer, or any combination thereof.


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