The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2022

Filed:

Apr. 02, 2019
Applicant:

California Institute of Technology, Pasadena, CA (US);

Inventors:

Phillip R. Jahelka, Altadena, CA (US);

Harry A. Atwater, South Pasadena, CA (US);

Wen-Hui Cheng, Pasadena, CA (US);

Rebecca D. Glaudell, Sierra Madre, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0687 (2012.01); H01L 21/02 (2006.01); H01L 31/0352 (2006.01); H01L 21/263 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/06875 (2013.01); H01L 21/02227 (2013.01); H01L 21/2633 (2013.01); H01L 31/035227 (2013.01); H01L 31/1892 (2013.01);
Abstract

Photovoltaics configured to be manufactured without epitaxial processes and methods for such manufacture are provided. Methods utilize bulk semiconducting crystal substrates, such as, for example, GaAs and InP such that epitaxy processes are not required. Nanowire etch and exfoliation processes are used allowing the manufacture of large numbers of photovoltaic cells per substrate wafer (e.g., greater than 100). Photovoltaic cells incorporate electron and hole selective contacts such that epitaxial heterojunctions are avoided during manufacture.


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