The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2022
Filed:
Aug. 26, 2019
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Hirofumi Kawai, Yokohama Kanagawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor substrate having a source region and a drain region, a first insulator between the source region and the drain region, a gate electrode having a first end on a side thereof closer to the source region than the drain region on a portion of the semiconductor substrate that is not covered with the first insulator, and having a second end on the first insulator closer to the drain region than the source region, and a second insulator that is continuous with the second end of the gate electrode and having a portion which is on the first insulator where the first insulator is not covered with the gate electrode, is on an end of the drain region, and is in contact with the gate electrode, the first insulator, and the drain region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile