The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2022
Filed:
Dec. 06, 2019
Applicant:
Stmicroelectronics (Tours) Sas, Tours, FR;
Inventors:
Samuel Menard, Chauray, FR;
Lionel Jaouen, St. Cyr sur Loire, FR;
Assignee:
STMicroelectronics (Tours) SAS, Tours, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/74 (2006.01); H01L 29/749 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/749 (2013.01); H01L 29/0692 (2013.01); H01L 29/0839 (2013.01);
Abstract
A thyristor is formed from a vertical stack of first, second, third, and fourth semiconductor regions of alternated conductivity types. The fourth semiconductor region is interrupted in a gate area of the thyristor. The fourth semiconductor region is further interrupted in a continuous corridor that extends longitudinally from the gate area towards an outer lateral edge of the fourth semiconductor region. A gate metal layer extends over the gate area of the thyristor. A cathode metal layer extends over the fourth semiconductor region but not over the continuous corridor.