The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11362202 B1

Date of Patent:

Jun. 14, 2022

Filed:

Aug. 13, 2020

Semiconductor device and manufacturing method thereof

Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventors:

Takahiro Tamura, Matsumoto, JP;

Michio Nemoto, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:

Primary Examiner:

Eduardo A Rodela

Int. Cl.

CPC ...

H01L 29/739 (2006.01); H01L 27/06 (2006.01); H01L 21/285 (2006.01); H01L 29/32 (2006.01); H01L 29/36 (2006.01); H01L 29/423 (2006.01); H01L 29/47 (2006.01); H01L 29/872 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 21/22 (2006.01); H01L 21/225 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);

U.S. Cl.

CPC ...

H01L 29/7391 (2013.01); H01L 21/02236 (2013.01); H01L 21/02255 (2013.01); H01L 21/221 (2013.01); H01L 21/2253 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/28537 (2013.01); H01L 27/0664 (2013.01); H01L 29/1095 (2013.01); H01L 29/32 (2013.01); H01L 29/36 (2013.01); H01L 29/4236 (2013.01); H01L 29/47 (2013.01); H01L 29/66356 (2013.01); H01L 29/7397 (2013.01); H01L 29/7806 (2013.01); H01L 29/872 (2013.01); H01L 29/8725 (2013.01);

Abstract

There is provided a semiconductor device including: an anode electrode that is provided on a front surface side of a semiconductor substrate; a drift region of a first conductivity type that is provided in the semiconductor substrate; a first anode region of a first conductivity type that is in Schottky contact with the anode electrode; and a second anode region of a second conductivity type that is different from the first conductivity type, in which the first anode region has a doping concentration lower than or equal to a doping concentration of the second anode region, and is spaced from the drift region by the second anode region.

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