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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11362162 B1

PDFFull Text
Date of Patent:
Jun. 14, 2022

Filed:

Sep. 14, 2018

Method of manufacturing metal oxide film and display device including metal oxide film

Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Myung Soo Huh, Suwon-si, KR;

Dong Kyun Ko, Hwaseong-si, KR;

Sung Chui Kim, Seongnam-si, KR;

Woo Jin Kim, Hwaseong-si, KR;

Cheol Lae Roh, Seongnam-si, KR;

Keun Hee Park, Seoul, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Gyeonggi-do, KR;

Attorney:

Cantor Colburn LLP

Primary Examiner:

Vincent Wall

Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 21/02 (2006.01); H01L 49/02 (2006.01); H01L 51/52 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3265 (2013.01); H01L 21/0228 (2013.01); H01L 21/02181 (2013.01); H01L 21/02186 (2013.01); H01L 21/02189 (2013.01); H01L 21/02205 (2013.01); H01L 21/02244 (2013.01); H01L 21/02274 (2013.01); H01L 27/1214 (2013.01); H01L 27/1225 (2013.01); H01L 27/1248 (2013.01); H01L 28/60 (2013.01); H01L 51/5206 (2013.01); H01L 21/02252 (2013.01); H01L 27/1255 (2013.01); H01L 2227/323 (2013.01); H01L 2251/303 (2013.01);
Abstract

A method of manufacturing a metal oxide film includes injecting a reaction gas and metal precursors into a chamber, forming a first metal precursor film on a substrate in a plasma OFF state, forming a first sub-metal oxide film by oxidizing the first metal precursor film in a plasma ON state, and forming a second metal precursor film on the first sub-metal oxide film in the plasma OFF state, where the metal oxide film has an amorphous phase, a thickness of about 20 nanometer (nm) to about 130 nm, and a dielectric constant of about 10 to about 50.

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