The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2022
Filed:
Jun. 17, 2020
Applicant:
SK Hynix Inc., Icheon, KR;
Inventor:
Si Jung Yoo, Seoul, KR;
Assignee:
SK hynix Inc., Icheon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); G11C 13/00 (2006.01); H01L 45/00 (2006.01); G11C 5/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/24 (2013.01); G11C 5/025 (2013.01); G11C 13/0004 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/144 (2013.01);
Abstract
A semiconductor memory may include: variable resistance layers and insulating layers alternately stacked; conductive pillars passing through the variable resistance layers and the insulating layers; a slit insulating layer passing through the insulating layers and extending in a first direction; and conductive layers interposed between the slit insulating layer and the variable resistance layers. The variable resistance layers may remain in an amorphous state during a program operation.