The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2022
Filed:
Oct. 14, 2019
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Ko-Tao Lee, Yorktown Heights, NY (US);
Xin Zhang, Chappaqua, NY (US);
Todd Edward Takken, Brewster, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/84 (2006.01); H01L 21/762 (2006.01); H01L 29/78 (2006.01); H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1207 (2013.01); H01L 21/76264 (2013.01); H01L 21/84 (2013.01); H01L 21/0254 (2013.01); H01L 29/2003 (2013.01); H01L 29/66462 (2013.01);
Abstract
The semiconductor structure includes a semiconductor-on-insulator (SOI) substrate. A group III nitride transistor is formed in a trench in the SOI substrate. The activation of the group III nitride transistor is controlled by a silicon-based transistor. The silicon-based transistor that includes a portion of a silicon layer of the SOI substrate. A group III nitride transistor device is adjacent to the silicon-based transistor.