The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2022
Filed:
May. 14, 2020
International Business Machines Corporation, Armonk, NY (US);
Ashim Dutta, Menands, NY (US);
Saumya Sharma, Albany, NY (US);
Tianji Zhou, Albany, NY (US);
Chih-Chao Yang, Glenmont, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for making a semiconductor apparatus includes forming a first bottom interconnect in a device area of a first dielectric layer; fabricating a device on top of the first bottom interconnect; capping the device with a first interlayer dielectric; exposing a logic area of the first dielectric layer that is adjacent to the device area by removing a portion of the first interlayer dielectric from the first dielectric layer while leaving another portion of the first interlayer dielectric that caps the device; and forming a second bottom interconnect in the logic area of the first dielectric layer. By forming the second bottom interconnect after the device fabrication and capping, damage to the device and to the second bottom interconnect is avoided.