The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2022

Filed:

Aug. 11, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyunseung Han, Seoul, KR;

Seonghyeog Choi, Hwaseong-si, KR;

Youngsuk Ra, Seoul, KR;

Hong Rak Son, Anyang-si, KR;

Taehyun Song, Anyang-si, KR;

Bohwan Jun, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03M 13/29 (2006.01); G06F 11/10 (2006.01); G11C 16/26 (2006.01); H03M 13/11 (2006.01); G06F 3/06 (2006.01); G11C 16/10 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G06F 3/0619 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G06F 11/1068 (2013.01); G11C 16/10 (2013.01); H03M 13/1102 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01);
Abstract

A storage device includes a nonvolatile memory device and a memory controller. The memory controller receives first data from the nonvolatile memory device based on a first read command, and performs error correction on the first data. When the error correction fails, the memory controller transmits a second read command and second read voltage information to the nonvolatile memory device, receives second data from the nonvolatile memory device, transmits a third read command and third read voltage information to the nonvolatile memory device, and receives third data from the nonvolatile memory device. The memory controller adjusts an offset based on the second data and the third data, transmits a fourth read command, fourth read voltage information, and the offset to the nonvolatile memory device, receives fourth data from the nonvolatile memory device, and performs a soft decision process based on the fourth data.


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