The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2022

Filed:

Feb. 21, 2020
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Dae Hwan Yun, Chungcheongbuk-do, KR;

Myeong Won Lee, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/16 (2006.01); G11C 16/24 (2006.01); G11C 16/08 (2006.01); G11C 16/04 (2006.01); G11C 16/32 (2006.01); G11C 16/30 (2006.01);
U.S. Cl.
CPC ...
G11C 16/16 (2013.01); G11C 16/04 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01); G11C 16/30 (2013.01); G11C 16/32 (2013.01); G11C 16/0466 (2013.01);
Abstract

Provided herein may be a semiconductor memory device. The semiconductor memory device may include: a memory cell array including a plurality of memory blocks; a peripheral circuit configured to apply an erase voltage to a source line and a plurality of select lines of a selected memory block among the plurality of memory blocks during an erase operation; and a control logic configured to control the peripheral circuit to form a trap in an area below at least one of a plurality of source select transistors included in the selected memory block, before the erase voltage is applied to the selected memory block.


Find Patent Forward Citations

Loading…