The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2022
Filed:
Feb. 11, 2021
Applicant:
Anaflash Inc., San Jose, CA (US);
Inventor:
Seung-Hwan Song, Palo Alto, CA (US);
Assignee:
Anaflash Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/10 (2006.01); G11C 5/14 (2006.01); G11C 16/08 (2006.01); G11C 16/16 (2006.01); G11C 16/24 (2006.01); G06N 3/063 (2006.01); G11C 16/30 (2006.01); G11C 16/34 (2006.01); G11C 11/56 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 7/1006 (2013.01); G06N 3/063 (2013.01); G11C 5/145 (2013.01); G11C 11/5635 (2013.01); G11C 11/5642 (2013.01); G11C 16/08 (2013.01); G11C 16/16 (2013.01); G11C 16/24 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01); G11C 16/3445 (2013.01); G11C 16/3459 (2013.01);
Abstract
A non-volatile memory combines a data cell and a reference cell. The data cell includes a coupling structure and a transistor stack. The transistor stack is electrically coupled to the coupling structure. The data cell can store data and output a data signal that corresponds to the data. The reference cell includes a transistor stack that has the same structure as that of the data cell and outputs a reference signal. A column circuit is electrically coupled to the data cell and the first reference cell and configured to process the data signal using the reference signal.