The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2022
Filed:
Jul. 02, 2020
Tdk-micronas Gmbh, Freiburg, DE;
Maria-Cristina Vecchi, Freiburg, DE;
Reinhard Erwe, Freiburg, DE;
Martin Cornils, Freiburg, DE;
Kerwin Khu, Freiburg, DE;
TDK-Micronas GmbH, Freiburg, DE;
Abstract
A vertical Hall sensor structure having a substrate layer, a semiconductor area of a first conductivity type, at least a first, a second and a third semiconductor contact area of the first conductivity type extending from an upper surface of the semiconductor area into the semiconductor area, and at least a first semiconductor contact area of a second conductivity type, wherein the semiconductor contact areas of the first conductivity type are spaced apart from each other and a metal connection contact layer is arranged on each semiconductor contact area of the first conductivity type. The first semiconductor contact area of the second conductivity type is adjacent to the first semiconductor contact area of the first conductivity type or is spaced at a distance of at most 0.2 μm from the first semiconductor contact area of the first conductivity type.