The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2022
Filed:
Mar. 14, 2017
Alma Mater Studiorum—universita' Di Bologna, Bologna, IT;
Universidade Nova DE Lisboa, Lisbon, PT;
Rodrigo Ferräo De Paiva Martins, Charneca da Caparica, PT;
Pedro Miguel Cândido Barquinha, Moscavide, PT;
Elvira Maria Correia Fortunato, Charneca da Caparica, PT;
Tobias Cramer, Pianoro, IT;
Beatrice Fraboni, Bologna, IT;
Universidade Nova de Lisboa, Lisbon, PT;
Alma Mater Studiorum—Universita di' Bologna, Bologna, IT;
Abstract
The present invention concerns a sensitive field effect device () comprising a semiconductor channel (), a source electrode () connected to said semiconductor channel (), a drain electrode () connected to said semiconductor channel (), such that said semiconductor channel () is interposed between said source electrode () and said drain electrode (), a gate electrode () and a dielectric layer () interposed between said gate electrode () and said semiconductor channel (), characterized in that said semiconductor channel () is a layer and is made of an amorphous oxide and in that said sensor means () are configured to change the voltage between said gate electrode () and said source electrode () upon a sensing event capable of changing their electrical state. The present invention also concerns a sensor and a method for manufacturing said field effect device ().