The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2022
Filed:
Feb. 10, 2017
Rovak Gmbh, Grumbach, DE;
Technische Universitaet Bergakademie Freiberg, Freiberg, DE;
Helmholtz-zentrum Dresden-rossendorf E.v., Dresden, DE;
Charaf Cherkouk, Dresden, DE;
Dirk C. Meyer, Dresden, DE;
Tilmann Leisegang, Dresden, DE;
Teresa Orellana Perez, Freiberg, DE;
Slawomir Prucnal, Dresden, DE;
Wolfgang Skorupa, Dresden, DE;
ROV AK GmbH, Grumbach, DE;
Technische Universitaet Bergakademie Freiberg, Freiberg, DE;
Helmholtz-Zentrum Dresden Rossendorf e.V., Dresden, DE;
Abstract
A method for producing silicon-based anodes for secondary batteries carries out the following steps for producing an anode: —depositing a silicon layer on a metal substrate having grain boundaries, wherein the silicon layer has a first boundary surface directed towards the metal substrate, —heating the metal substrate using a heating unit to a temperature between 200° C. and 1000° C., —conditioning the region of the second boundary surface of the silicon layer that is facing away from the metal substrate using an energy-intensive irradiation during the heating, —generating polyphases in the region of the silicon layer and the metal substrate, made up of amorphous silicon and/or crystalline silicon of the silicon of the silicon layer and of crystalline metal of the metal substrate and of silicide and—generating crystalline metal of the metal substrate.