The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2022

Filed:

Nov. 18, 2019
Applicant:

Lextar Electronics Corporation, Hsinchu, TW;

Inventors:

Chang-Zhi Zhong, Hsinchu, TW;

Hung-Chun Tong, Hsinchu, TW;

Yu-Chun Lee, Hsinchu, TW;

Tzong-Liang Tsai, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 11/02 (2006.01); C09K 11/88 (2006.01); H01L 33/50 (2010.01); H01L 33/56 (2010.01); H01L 33/44 (2010.01); H01L 33/06 (2010.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 33/504 (2013.01); C09K 11/025 (2013.01); C09K 11/883 (2013.01); H01L 33/06 (2013.01); H01L 33/44 (2013.01); H01L 33/501 (2013.01); H01L 33/502 (2013.01); H01L 33/56 (2013.01); H01L 51/0032 (2013.01);
Abstract

A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, in which the first protective layer includes silicon dioxide, and in silicon atoms of the silicon dioxide, the silicon atom of the zeroth configuration (Q) does not connect with any siloxy group, and the silicon atom of the first configuration (Q) connects with one siloxy group, and the silicon atom of the second configuration (Q) connects with two siloxy groups, and the silicon atom of the third configuration (Q) connects with three siloxy groups, and the silicon atom of the fourth configuration (Q) connects with four siloxy groups, in which a total amount of the silicon atoms of the third configuration and the fourth configuration is greater than a total amount of the silicon atoms of the zeroth configuration, the first configuration and the second configuration.


Find Patent Forward Citations

Loading…